? 2002 ixys all rights reserved advance technical information v ces = 1700 v i c25 =42a v ce(sat) = 6.0 v t fi =50ns 98933 (7/02) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 750 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 v ces t j = 25 c50 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.5 6.0 v t j = 125 c 5.0 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c42a i c90 t c = 90 c21a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm =90 a (rbsoa) clamped inductive load v ces = 1350 v t sc v ge = 15 v, v ces = 1200v, t j = 125 c (scsoa) r g = 10 ? non repetitive 10 s p c t c = 25 c 312 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g bimosfet tm monolithic bipolar mos transistor ixbn 42n170a e g e c minibloc, sot-227 b (ixbn) e153432 g = gate c = collector e = emitter either source terminal at minibloc can be used as main or kelvin emitter features z high blocking voltage z fast switching z high current handling capability z mos gate turn-on - drive simplicity z isolation voltage 2500v applications z ac motor speed control z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z substitutes for high voltage mosfets advantages z lower conduction losses than mosfets z high power density z easy to mount with 2 screws z space saving
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 15 24 s pulse test, t 300 s, duty cycle 2 % c ies 3700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 170 pf c res 45 pf q g 155 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 55 nc t d(on) 25 ns t ri 35 ns t d(off) 230 ns t fi 50 ns e off 2.8 mj t d(on) 25 ns t ri 38 ns e on 5.0 mj t d(off) 300 ns t fi 120 ns e off 6mj r thjc 0.4 k/w r thck 0.05 k/w reverse diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test, 5.0 v t < 300 us, duty cycle d < 2% i rm i f = 25a, v ge = 0 v, -di f /dt = 50 a/us 15 a t rr v r = 100v 330 n s inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 1.0 ? inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 1.0 ? ixbn 42n170a m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b
|
